M5m5165p datasheet 2n3904

M5m5165p datasheet 2n3904

2N3904 MMBT390 4 MMPQ390 4 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplif ier and switch. The useful dynamic range extends to 100 mA as a swi tch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted 2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1 Order today, ships today. 2N3904-AP – Bipolar (BJT) Transistor NPN 40V 200mA 250MHz 600mW Through Hole TO-92 from Micro Commercial Co. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

Read the datasheet. Input and output voltage are only guaranteed to within 3V of the supplies and minimum supply voltage is spec'ed at 10V. It will likely operate at a lower supply voltage and, if you're lucky, you'll be able to find a unit that gives better than typical voltage swings. NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. MPSH10 MMBTH10 Absolute Maximum Ratings* TA = 25°C unless otherwise noted ©Semiconductor Components Industries, LLC, 2007 April, 2007 -- Rev. 3 1 Publication Order Number: MPSA28/D MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon

BC547 datasheet, BC547 pdf, BC547 data sheet, datasheet, data sheet, pdf Features BV CEO > 40V I C = 200mA High Collector Current P D = 1000mW Power Dissipation 0.60mm2 Package Footprint, 13 Times Smaller than SOT23 0.5mm Height Package Minimizing Off-Board Profile Complementary PNP Type MMBT3906LP Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3)

MPQ3904 Datasheet (PDF) 1.1. ffb3904 fmb3904 mmpq3904.pdf Size:98K _fairchild_semi. FFB3904 FMB3904 MMPQ3904 E2 C2 B4 E4 B2 E1 B3 E3 C1 B2 C1 E2 B1 E1 C4 C2 C4 B2 SC70-6 C3 B1 E2 C3 pin #1 Mark: .1A E1 C2 B1 pin #1 C2 C1 NOTE: The pinouts are symmetrical; pin 1 and pin C1 SOIC-16 pin #1 4 are interchangeable. 2N6004 Datasheet (PDF) 5.1. l2n600.pdf Size:395K _lrc LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), [email protected], [email protected] = 3.8Ω We declare that the material of product compliance with RoHS requirements.

2N3904 Datasheet, 2N3904 PDF, 2N3904 Data sheet, 2N3904 manual, 2N3904 pdf, 2N3904, datenblatt, Electronics 2N3904, alldatasheet, free, datasheet, Datasheets, data ... IRF530 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for IRF530 MOSFET. Browse DigiKey's inventory of NPN TransistorsNPN. Features, Specifications, Alternative Product, Product Training Modules, and Datasheets are all available. NXP Semiconductors Product data sheet NPN switching transistor PMST3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices.

Read the datasheet. Input and output voltage are only guaranteed to within 3V of the supplies and minimum supply voltage is spec'ed at 10V. It will likely operate at a lower supply voltage and, if you're lucky, you'll be able to find a unit that gives better than typical voltage swings. 2N3904 fT 250 300 − − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hie 1.0 1.0 8.0 10 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hre 0.1 0.5 5.0 8.0 X 10−4 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. MPSH10 MMBTH10 Absolute Maximum Ratings* TA = 25°C unless otherwise noted

2N2907A Small Signal Switching Transistor PNP Silicon Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −60 Vdc Collector−Base Voltage VCBO −60 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −600 mAdc NPN switching transistor 2N3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. DS30036 Rev. E-2 1 of 2 MMBT3904 MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching Characteristic Symbol MMBT3904 Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V NXP Semiconductors Product data sheet NPN switching transistor PMST3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. NPN switching transistor 2N3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published.

2N3904 General Purpose Transistors NPN TO-92 Page 1 31/05/05 V1.0 High Speed Switching Features: • NPN Silicon Planar Switching Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.

2N3904 2N3904 TO-92 / Bulk 2N3904-AP 2N3904 TO-92 / Ammopack TO-92 Bulk TO-92 Ammopack 1/5 BC547 datasheet, BC547 pdf, BC547 data sheet, datasheet, data sheet, pdf

2N3904 SMALL SIGNAL TRANSISTORS (NPN) FEATURES ¤ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¤ As complementary type, the PNP transistor 2N3906 is recommended. ¤ On special request, this transistor is also manufactured in the pin configuration TO-18. ¤ This transistor is also available in the SOT-23 case

MPQ3904 Datasheet (PDF) 1.1. ffb3904 fmb3904 mmpq3904.pdf Size:98K _fairchild_semi. FFB3904 FMB3904 MMPQ3904 E2 C2 B4 E4 B2 E1 B3 E3 C1 B2 C1 E2 B1 E1 C4 C2 C4 B2 SC70-6 C3 B1 E2 C3 pin #1 Mark: .1A E1 C2 B1 pin #1 C2 C1 NOTE: The pinouts are symmetrical; pin 1 and pin C1 SOIC-16 pin #1 4 are interchangeable. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

2N3904 2N3904 TO-92 / Bulk 2N3904-AP 2N3904 TO-92 / Ammopack TO-92 Bulk TO-92 Ammopack 1/5 AUK Corp catalog First Page, datasheet, datasheet search, data sheet, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, semiconductors NXP Semiconductors Product data sheet NPN switching transistor PMST3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 2N3904 Absolute maximum ratings Ta=25 °C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg-55~150 °C